- pb free and rohs compliant - green compound (halogen free) with suffix "g" on packing code and prefix "g" on date code - ideal for surface mounted applications - v z tolerance selection of 2% sod-123f - matte tin(sn) lead finish with nickel(ni) underplate - case: flat lead sod-123 small outline plastic package - terminal: matte tin plat ed, lead free, solderable per mil-std-202, method 208 guaranteed - polarity: indicated by cathode band - weight : 8.85 0.5mg v f v p d mw r ja o c/w t j o c t stg o c v br i zk : test current for voltage v br z zk : dynamic impedance at i zk i zt : test current for voltage v z v z z zt : dynamic impedance at i zt i zm : maximum steady state current v zm document number: ds_s1405026 : voltage at current i z t zener i vs. v characteristics 1 500 : voltage at i zm bzt52b2v4 - bzt52b75 features : voltage at i zk taiwan semiconductor small signal product - wide zener voltage range selection : 2.4v to 75v version: e14 - 65 to + 150 value unit storage temperature notes: 1. valid provided that electrodes are kept at ambient temperature parameter 150 power dissipation thermal resistance from junction to ambient (note 1) junction temperature 350 forward voltage @ i f = 10ma symbol - moisture sensitivity level 1 500mw, 2% tolerance smd zener diode maximum ratings and electrical characteristics (t a =25 unless otherwise noted) mechanical data - high temperature soldering guaranteed: 260c/10s - surface mount device type
(ratings at ta=25 o c ambient temperature unless otherwise specified, and v f forward voltage = 1v maximum @ i f = 10 ma for all part numbers) i zt z zt @ i zt z zk @ i zk i zk i r v r min(v) nom(v) max(v) ma ma ua v bzt52b2v4 2v4b 2.35 2.40 2.45 5 100 564 1 45 1 bzt52b2v7 2v7b 2.65 2.70 2.75 5 100 564 1 18 1 bzt52b3v0 3v0b 2.94 3.00 3.06 5 100 564 1 9 1 bzt52b3v3 3v3b 3.23 3.30 3.37 5 95 564 1 4.5 1 bzt52b3v6 3v6b 3.53 3.60 3.67 5 90 564 1 4.5 1 bzt52b3v9 3v9b 3.82 3.90 3.98 5 90 564 1 2.7 1 bzt52b4v3 4v3b 4.21 4.30 4.39 5 90 564 1 2.7 1 bzt52b4v7 4v7b 4.61 4.70 4.79 5 80 470 1 2.7 2.0 bzt52b5v1 5v1b 5.00 5.10 5.20 5 60 451 1 1.8 2.0 bzt52b5v6 5v6b 5.49 5.60 5.71 5 40 376 1 0.9 2.0 bzt52b6v2 6v2b 6.08 6.20 6.32 5 10 141 1 2.7 4.0 bzt52b6v8 6v8b 6.66 6.80 6.94 5 15 75 1 1.8 4.0 bzt52b7v5 7v5b 7.35 7.50 7.65 5 15 75 1 0.9 5.0 BZT52B8V2 8v2b 8.04 8.20 8.36 5 15 75 1 0.63 5.0 bzt52b9v1 9v1b 8.92 9.10 9.28 5 15 94 1 0.45 6.0 bzt52b10 10vb 9.80 10.00 10.20 5 20 141 1 0.18 7.0 bzt52b11 11vb 10.78 11.00 11.22 5 20 141 1 0.09 8.0 bzt52b12 12vb 11.76 12.00 12.24 5 25 141 1 0.09 8.0 bzt52b13 13vb 12.74 13.00 13.26 5 30 160 1 0.09 8.0 bzt52b15 15vb 14.70 15.00 15.30 5 30 188 1 0.045 10.5 bzt52b16 16vb 15.68 16.00 16.32 5 40 188 1 0.045 11.2 bzt52b18 18vb 17.64 18.00 18.36 5 45 212 1 0.045 12.6 bzt52b20 20vb 19.60 20.00 20.40 5 55 212 1 0.045 14.0 bzt52b22 22vb 21.56 22.00 22.44 5 55 235 1 0.045 15.4 bzt52b24 24vb 23.52 24.00 24.48 5 70 235 1 0.045 16.8 bzt52b27 27vb 26.46 27.00 27.54 2 80 282 0.5 0.045 18.9 bzt52b30 30vb 29.40 30.00 30.60 2 80 282 0.5 0.045 21.0 bzt52b33 33vb 32.34 33.00 33.66 2 80 306 0.5 0.045 23.0 bzt52b36 36vb 35.28 36.00 36.72 2 90 329 0.5 0.045 25.2 bzt52b39 39vb 38.22 39.00 39.78 2 130 329 0.5 0.045 27.3 bzt52b43 43vb 42.14 43.00 43.86 2 150 353 0.5 0.045 30.1 bzt52b47 47vb 46.06 47.00 47.94 2 170 353 0.5 0.045 33.0 bzt52b51 51vb 49.98 51.00 52.02 2 180 376 0.5 0.045 35.7 bzt52b56 56vb 54.88 56.00 57.12 2 200 400 0.5 0.045 39.2 bzt52b62 62vb 60.76 62.00 63.24 2 215 423 0.5 0.045 43.4 bzt52b68 68vb 66.64 68.00 69.36 2 240 447 0.5 0.045 47.6 bzt52b75 75vb 73.50 75.00 76.50 2 255 470 0.5 0.045 52.5 notes 1. the zener voltage (v z ) is tested under pulse condition of 10ms. 2. the device numbers listed have a standard tolerance on the nomial zener voltage of 2%. 3. for detailed information on price, availability and deliv ery of nominal zener vo ltages between the voltages shown and tighter voltage tolerances, contact your nearest taiwan semiconductor representative. 4. the zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current is superimposed to i zt or i zk . document number: ds_s1405026 version: e14 maximun reverse current v z @ i zt bzt52b2v4 - bzt52b75 taiwan semiconductor electrical characteristics device type marking code zener voltage range maximun zener impedance ohm small signal product
document number: ds_s1405026 bzt52b2v4 - bzt52b75 taiwan semiconductor small signal product ratings and characteristics curves (ta=25 unless otherwise noted) version: e14 0.01 0.1 1 10 100 0123456789101112 zener current (ma) zener voltage (v) fig. 2 zener breakdown characteristics t a =25 o c 0.01 0.1 1 10 100 15 25 35 45 55 65 75 85 zener current (ma) zener voltage (v) fig. 3 zener breakdown characteristics 1 10 100 1000 1 10 100 capacitance (pf) zener voltage (v) fig. 5 typical capacitance 0 100 200 300 400 500 0 50 100 150 200 power dissipation (mw) ambient temperature ( o c) fig. 4 admissible power dissipation curve 1 10 100 1000 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 forward current (ma) forward voltage (v) fig. 1 typical forward characteristics t a =25 o c 1 10 100 1000 1 10 100 dynamic impedence(ohm) zener voltage (v) fig. 6 effect of zener voltage on impedence i z =5ma i z =20ma
part no. bzt52bxxx (note2) part no. bzt52b2v4 bzt52b2v4 bzt52b2v4 document number: ds_s1405026 version: e14 rh g sod-123f bzt52b2v4-l0 rhg l0 rh g packing 3k / 7" reel green compound green compound code description rh g bzt52b2v4 - bzt52b7 5 green compound manufacture code b0 ordering information packing code packing code green compound note1: manufacture special control, if empty means no special control requirement. example preferred p/n note2: "xxx" is device code from "2v4" thru "75", detail could follow the previous page bzt52b2v4-b0 rhg rh g bzt52b2v4 rhg taiwan semiconductor small signal product package green compound code manufacture code (note1)
dimensions min max min max a 1.50 1.70 0.059 0.067 b 3.30 3.90 0.130 0.154 c0.50 0.70 0.020 0.028 d 2.50 2.70 0.098 0.106 e 0.80 1.15 0.031 0.045 f 0.05 0.20 0.002 0.008 suggested pad layout c g x x1 y document number: ds_s1405026 4.20 0.165 1.80 0.071 1.34 0.053 typ. typ. 2.86 0.113 1.52 0.060 small signal product version: e14 bzt52b2v4 - bzt52b75 dim. taiwan semiconducto r unit (mm) unit (inch) dim. unit (mm) unit (inch)
notice document number: ds_s1405026 small signal product bzt52b2v4 - bzt52b75 taiwan semiconductor version: e14 specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no r esponsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product descrip tion only. no license, express or implied, to any intellec tual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, rela ting to sale and/or use of tsc products including liability or w arranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from s uch improper use or sale.
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